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SEMICONDUCTOR-FREE VACUUM FIELD EFFECT TRANSISTOR FABRICATION AND 3D VACUUM FIELD EFFECT TRANSISTOR ARRAYS

机译:无半导体真空场效应晶体管制造和3D真空场效应晶体管阵列

摘要

A vacuum field-emission-transistor device, a drain comprised of either a metal or a semimetal material, a gate arranged adjacent to, but separated from, the drain, a source comprised of either a metal or a semimetal material adjacent to, but separated from the metal gate, and a void through the metal drain and the metal gate to expose the drain, wherein the distance between the drain and the source is shorter than a mean free path distance of electrons in air.
机译:真空场致发射晶体管器件,由金属或半金属材料构成的漏极,与该漏极相邻但隔开的栅极,由金属或半金属材料构成的源极相邻但隔开的源极从金属栅极开始的空穴和穿过金属漏极和金属栅极的空穴暴露出漏极,其中漏极和源极之间的距离短于空气中电子的平均自由程距离。

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