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Semiconductor light-emitting structure with metal layer and distributed bragg reflector and semiconductor package structure thereof
Semiconductor light-emitting structure with metal layer and distributed bragg reflector and semiconductor package structure thereof
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机译：具有金属层和分布式布拉格反射器的半导体发光结构及其半导体封装结构
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摘要
A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.
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