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Method of adjusting read voltages applied by a nonvolatile memory device using information stored by a read history table

机译:使用读取历史表存储的信息来调整非易失性存储装置施加的读取电压的方法

摘要

An operating method of a nonvolatile memory system includes receiving a read request for at least one page from a host. Upon receiving the read request, read voltages are adjusted using a read history table to perform a first read operation in which data stored at the nonvolatile memory is read. An optimal read voltage set is detected when data read according to the first read operation includes an uncorrectable error, and a second read operation is performed in which the stored data is read based on the detected optimal read voltage set. The read history table is updated based on a reliability parameter indicating a characteristic of the nonvolatile memory, a characteristic of the data at the first or second read operation, the optimal read voltage, or the read history table.
机译:非易失性存储系统的操作方法包括从主机接收对至少一页的读取请求。在接收到读取请求之后,使用读取历史表来调整读取电压以执行第一读取操作,在该第一读取操作中读取存储在非易失性存储器中的数据。当根据第一读取操作读取的数据包括不可校正的错误时,检测到最佳读取电压组,并且执行第二读取操作,其中基于检测到的最佳读取电压组来读取存储的数据。基于指示非易失性存储器的特性,在第一或第二读取操作时的数据的特性,最佳读取电压或读取历史表的可靠性参数来更新读取历史表。

著录项

  • 公开/公告号US10120589B2

    专利类型

  • 公开/公告日2018-11-06

    原文格式PDF

  • 申请/专利权人 BONG-KIL JUNG;

    申请/专利号US201514881182

  • 发明设计人 BONG-KIL JUNG;

    申请日2015-10-13

  • 分类号G06F12;G06F3/06;G06F11;G06F11/07;G06F11/16;G06F11/10;

  • 国家 US

  • 入库时间 2022-08-21 13:04:23

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