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Method of manufacturing SiC wafer, method of manufacturing SiC semiconductor, and graphite silicon carbide composite substrate
Method of manufacturing SiC wafer, method of manufacturing SiC semiconductor, and graphite silicon carbide composite substrate
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机译：SiC晶片的制造方法，SiC半导体的制造方法以及石墨碳化硅复合基板
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摘要
Provided is a method for producing an SiC wafer, said method comprising: a step of preparing a graphite-silicon carbide composite substrate that has a vitreous carbon layer on the surface of a graphite substrate and a CVD-SiC layer atop the vitreous carbon layer, and preparing a single-crystal SiC substrate that has on the surface an ion injection layer into which hydrogen ions have been injected; a joining step in which a joined body is obtained by bonding the CVD-SiC layer of the graphite-silicon carbide composite substrate and the ion injection layer of the single-crystal SiC substrate; a first separation step in which a single-crystal coated substrate is obtained by heating the joined body and separating the ion injection layer from the single-crystal SiC substrate; and a second separation step in which an SiC wafer is obtained by separating the vitreous carbon layer and CVD-SiC layer of the single-crystal coated substrate.
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