首页> 外国专利> SINGLE-CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME, TOOL INCLUDING SINGLE-CRYSTAL DIAMOND, AND COMPONENT INCLUDING SINGLE-CRYSTAL DIAMOND

SINGLE-CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME, TOOL INCLUDING SINGLE-CRYSTAL DIAMOND, AND COMPONENT INCLUDING SINGLE-CRYSTAL DIAMOND

机译:单晶金刚石及其制造方法,包括单晶金刚石的工具和包括单晶金刚石的成分

摘要

In an X-ray topography image for a crystal growth main surface (20m) of a single-crystal diamond (20), a group of crystal defect points (20dp) are gathered, each of the crystal defect points (20dp) being a tip point of a crystal defect line (20dq) reaching the crystal growth main surface (20m), the crystal defect line (20dq) representing a line in which a crystal defect (20d) exists. Further, in the single-crystal diamond (20), a plurality of crystal defect line-like gathered regions (20r) exist in parallel. In the plurality of crystal defect line-like gathered regions (20r), groups of crystal defect points (20dp) are gathered to extend in the form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction. Accordingly, a single-crystal diamond is provided which is used suitably for a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, and the like.
机译:在单晶金刚石(20)的晶体生长主表面(20m)的X射线形貌图像中,聚集了一组晶体缺陷点(20dp),每个晶体缺陷点(20dp)为尖端。在晶体缺陷线(20dq)到达晶体生长主面(20m)的点,晶体缺陷线(20dq)表示存在晶体缺陷(20d)的线。此外,在单晶金刚石(20)中,平行存在多个晶体缺陷线状的聚集区域(20r)。在多个晶体缺陷线状聚集区域(20r)中,多组晶体缺陷点(20dp)以线的形式在相对于一个任意指定方向成不大于30°的角度的方向上延伸。因此,提供了一种单晶金刚石,其适合用于切削工具,抛光工具,光学部件,电子部件,半导体材料等。

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