A semiconductor device comprises a semiconductor body having first and second lateral surfaces. A first device region includes a drift region of a first conductivity type and a drift current control region of a second conductivity type spaced from the second lateral surface by the drift region. A second device region includes a barrier layer and a buffer layer having a bandgap other than the barrier layer such that a two-dimensional charge carrier gas channel is formed along an interface between the buffer layer and the barrier layer. An electrically conductive substrate contact forms a low-resistance connection between the two-dimensional charge carrier gas channel and the drift region. A gate structure is configured to control a conduction state of the two-dimensional charge carrier gas. The drift current control region is configured to block a vertical current in the drift region across a space charge region.
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