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ELECTRONIC DEVICE INCLUDING A DOPED REGION DISPOSED UNDER AND HAVING A HIGHER DOPANT CONCENTRATION THAN A CHANNEL REGION AND A PROCESS OF FORMING THE SAME
ELECTRONIC DEVICE INCLUDING A DOPED REGION DISPOSED UNDER AND HAVING A HIGHER DOPANT CONCENTRATION THAN A CHANNEL REGION AND A PROCESS OF FORMING THE SAME
The electronic device is disposed below the drain region of the transistor, the channel region of the transistor, and substantially all of the channel region, and is not disposed under substantially all of the bulk doped portion of the drain region, and has a higher dopant concentration Doped regions. The step of forming the electronic device may comprise forming a drain region, a channel region and a doped region, wherein the drain region has a conductivity type opposite to the channel and the doped region. After formation of the drain, channel and doping regions, the doping region is disposed substantially below all of the channel regions, the doping region is not disposed below substantially all of the bulk doped portion of the drain region, As shown in FIG.;
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