首页> 外国专利> 3 Photoelectrode for water splitting having 3D inverse Opal nanostructure and fabrication method thereof

3 Photoelectrode for water splitting having 3D inverse Opal nanostructure and fabrication method thereof

机译:3具有3D反蛋白石纳米结构的水分解用光电极及其制备方法

摘要

The present invention is a three-dimensional inverse opal (Inverse Opal) three-dimensional inverse opal containing nanostructure of SnO 2 Core (core) layer and the TiO 2 shell (shell) layer deposited on the SnO 2 core layer (Inverse Opal) nanostructures The present invention relates to a photoelectrode for water decomposition and a method for producing the same, wherein the photoelectrode for water decomposition of a three-dimensional inverse opal nano structure according to the present invention exhibits a three-dimensional nanowire mesh structure to maximize the active surface, (PEC) efficiency can be significantly improved by coating the TiO 2 layer to an optimal thickness by an atomic layer deposition (ALD) method on a SnO 2 IO film having an inverse opal nanostructure. In particular, when the TiO 2 layer is coated with an optimal thickness on a fluorinated SnO 2 IO film (FTO (Fluorided Tin Oxide) IO film), the PEC efficiency is further improved.
机译:本发明是包含SnO 2 芯(芯)层和TiO 2 壳(壳)的纳米结构的三维反蛋白石(Inverse Opal)三维反蛋白石。 SnO 2 芯层(反蛋白石)纳米结构上沉积的层)本发明涉及用于水分解的光电极及其制备方法,其中用于水分解的光电极是三维的根据本发明的反蛋白石纳米结构表现出三维纳米线网状结构以最大化活性表面,通过将TiO 2 层涂覆至最佳厚度可以显着提高(PEC)效率。具有反蛋白石纳米结构的SnO 2 IO膜上的原子层沉积(ALD)方法。特别地,当在氟化的SnO 2 IO膜(FTO(氟化锡氧化)IO膜)上以最佳厚度涂覆TiO 2 层时,PEC效率为进一步改善。

著录项

  • 公开/公告号KR101745822B1

    专利类型

  • 公开/公告日2017-06-09

    原文格式PDF

  • 申请/专利号KR20160035107

  • 发明设计人 강순형;

    申请日2016-03-24

  • 分类号C25B11/04;B05D1;C23C16/455;C23C16/56;C25B1;C25B1/04;C25B11/02;C25B9;

  • 国家 KR

  • 入库时间 2022-08-21 13:25:22

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号