首页> 外国专利> - - Preparing method of the core-shell structured carbon nanotube channel structure and carbon nanotube channel structure by the same method and carbon nanotube transistor having the same

- - Preparing method of the core-shell structured carbon nanotube channel structure and carbon nanotube channel structure by the same method and carbon nanotube transistor having the same

机译:---用相同方法制备核-壳结构的碳纳米管沟道结构和碳纳米管沟道结构的方法以及具有该结构的碳纳米管晶体管

摘要

The present invention relates to a method of manufacturing a core-shell structured carbon nanotube channel structure used as the channel of a transistor. More particularly, the present invention relates to a method of manufacturing a core-shell structured carbon nanotube channel structure and a carbon nanotube channel structure manufactured by the same method and a carbon nanotube transistor having the same. It does not require additional semiconductor processes for electrical connection with source and drain electrodes, by selectively coating a metal oxide insulating layer on a surface except both ends of carbon nanotubes through chemical surface manipulation and supermolecular interaction on solution.
机译:本发明涉及一种制造用作晶体管的沟道的核-壳结构的碳纳米管沟道结构的方法。更具体地,本发明涉及一种制造核-壳结构的碳纳米管沟道结构的方法和通过该方法制造的碳纳米管沟道结构以及具有该结构的碳纳米管晶体管。通过通过化学表面操作和溶液上的超分子相互作用,在除碳纳米管两端以外的表面上选择性地涂覆金属氧化物绝缘层,不需要与源极和漏极电连接的附加半导体工艺。

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