首页> 外国专利> SP3 A HIGH POWER IMPULSE MAGNETRON SPUTTERING PROCESS TO ACHIEVE A HIGH DENSITY HIGH SP3 CONTAINING LAYER

SP3 A HIGH POWER IMPULSE MAGNETRON SPUTTERING PROCESS TO ACHIEVE A HIGH DENSITY HIGH SP3 CONTAINING LAYER

机译：SP3高功率脉冲磁控溅射工艺，可实现高密度，高SP3含量的层

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摘要

Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method includes delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target; Transferring an energy pulse to a sputter gas to produce a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power of 1 W / cm ² to 10 W / cm ² , A sputtering plasma is controlled by a magnetic field, and a magnetic field is less than 300 Gauss; And transferring a stuffering plasma to the sputter target to form an ionized species, wherein the ionized species forms a crystalline carbon-containing layer on the substrate.

机译：本文公开了沉积纳米晶金刚石层的方法。该方法包括将溅射气体输送到位于第一处理腔室的处理区域中的衬底，该第一处理腔室具有含碳的溅射靶;以及第二溅射腔。将能量脉冲转移到溅射气体以产生溅射等离子体，该溅射等离子体具有溅射持续时间，该能量脉冲的平均功率为1 W / cm ^{2 至10 W / cm ^{2 ，溅射等离子体受磁场控制，磁场小于300高斯;然后将填充等离子体转移到溅射靶上以形成离子化的物质，其中离子化的物质在基板上形成结晶的含碳层。}}

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公开/公告号KR20170044174A

专利类型
公开/公告日2017-04-24

原文格式PDF
申请/专利权人 어플라이드 머티어리얼스 인코포레이티드;
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申请/专利号KR1020177007658
发明设计人 스토월 마이클 더블유.;첸 용메이;
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申请日2015-08-14
分类号H01L21/02;C23C14/06;C23C14/35;C23C16/27;C23C16/50;H01L21/203;H01L21/205;H01L21/67;
国家 KR
入库时间 2022-08-21 13:27:41

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