首页> 外国专利> Prepration method of CZTS or CZTSe thin film solar cell using coevaporation and solar cell prepared by the same

Prepration method of CZTS or CZTSe thin film solar cell using coevaporation and solar cell prepared by the same

机译:利用共蒸发制备CZTS或CZTSe薄膜太阳能电池的方法及由其制备的太阳能电池

摘要

The present invention relates to a thin film with a band gap slope by forming a CZTS-based precursor through a co-evaporation method, and supplying VI group elements and performing a rapid thermal treatment under an inert gas atmosphere at the same time, and a thin film solar cell using the same. A method for manufacturing a CZTS-based thin film solar cell according to the present invention includes the steps of: preparing a substrate; forming a rear electrode on the substrate; forming a metal precursor layer by depositing a metal precursor including a Cu precursor, a Zn precursor, an Sn precursor and a VI group element precursor on the rear electrode; and manufacturing a light absorbing layer by performing a thermal treatment under the inert gas atmosphere. Accordingly, the present invention can simplify solar cell manufacturing processes and obtain high light conversion efficiency.
机译:本发明涉及一种具有带隙斜率的薄膜,该薄膜通过共蒸发法形成基于CZTS的前体,并在惰性气体气氛下同时提供VI族元素并进行快速热处理,以及薄膜太阳能电池使用相同。根据本发明的用于制造基于CZTS的薄膜太阳能电池的方法包括以下步骤:准备衬底;以及将衬底设置在衬底上。在基板上形成后电极;通过在后电极上沉积包括Cu前驱体,Zn前驱体,Sn前驱体和VI族元素前驱体的金属前驱体来形成金属前驱体层;通过在惰性气体气氛下进行热处理来制造光吸收层。因此,本发明可以简化太阳能电池的制造工艺并获得高的光转换效率。

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