首页> 外国专利> DIE AND DIE PACK FOR GROWING SAPPHIRE SINGLE CRYSTALS, APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTALS, AND METHOD FOR GROWING SAPPHIRE SINGLE CRYSTALS

DIE AND DIE PACK FOR GROWING SAPPHIRE SINGLE CRYSTALS, APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTALS, AND METHOD FOR GROWING SAPPHIRE SINGLE CRYSTALS

机译:用于生长蓝宝石单晶的模具和模具包,用于生长蓝宝石单晶的装置以及用于生长蓝宝石单晶的方法

摘要

[Problem] To provide: a sapphire single crystal which has a large diameter and exceptional crystalline quality, by rapidly determining, without the need for an extended period of time or imposing costs, the curvature R of the top surface of a die used for growing sapphire single crystals by the EFG process; and a sapphire substrate. Additionally, to provide a die and die pack for use in growing sapphire single crystals by the EFG process, and a method for growing sapphire single crystals. [Solution] Used is a die for use in growing sapphire single crystals by the EFG process, the die being characterized in that: the upper surface has a curvature R in the lengthwise direction; and the curvature R is no more than five times the width W in the lengthwise direction.
机译:[问题]提供:通过快速确定用于生长的模具的上表面的曲率R,而无需大的时间或施加成本,该蓝宝石单晶体具有大直径和优异的晶体质量。蓝宝石单晶通过EFG工艺;和蓝宝石衬底。另外,提供一种用于通过EFG工艺生长蓝宝石单晶的管芯和模具包装,以及一种用于生长蓝宝石单晶的方法。 [解决方案]使用的是用于通过EFG工艺生长蓝宝石单晶的模具,其特征在于:上表面在长度方向上具有曲率R;曲率R为长度方向的宽度W的5倍以下。

著录项

  • 公开/公告号WO2017061360A1

    专利类型

  • 公开/公告日2017-04-13

    原文格式PDF

  • 申请/专利权人 NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA;

    申请/专利号WO2016JP79235

  • 发明设计人 SAITO HIRONORI;

    申请日2016-10-03

  • 分类号C30B29/20;C30B15/34;

  • 国家 WO

  • 入库时间 2022-08-21 13:31:24

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