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AN APPARATUS FOR CRYSTAL GROWTH OF TRANSITION METAL DOPED COMPOUND SEMICONDUCTOR FROM MELT.
AN APPARATUS FOR CRYSTAL GROWTH OF TRANSITION METAL DOPED COMPOUND SEMICONDUCTOR FROM MELT.
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机译：熔体中过渡金属掺杂的复合半导体晶体生长的装置。
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摘要
This invention relates to an apparatus for crystal growth of transition metal doped compound semiconductor from melt and in particular, this invention relates to an apparatus for growth of large grain single crystal in which the temperature controlled vertical tube furnace with proper temperature profile placed between two electromagnetic poles. Furthermore, this invention also relates to an apparatus for crystal growth wherein the growth of transition metal doped compound semiconductor by using unseeded vacuum sealed conical tip quartz ampoule with low radius. The other embodiment of this invention is to provide an apparatus for crystal growth in which one can fixed the spin of transition metal with external applied magnetic field at time of in-situ annealing below the freezing point of host material by help of adjustable nonferrous ampoule holding stand. This invention also relates to an apparatus for growth of transition metal doped compound semiconductor crystal from melt which is. simple in structure and has good application prospect and has the advantages of enhanceing the its behaviour of both electric and magnetic properties. Lastly the present invention is superior to available monocrystal growing apparatus, which has complicated structure and too much sealing links, and has relatively simple sealing structure and low cost.
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