首页> 外国专利> Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers

Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers

机译:用于无源调Q激光器和微激光器的异质单石榴石基晶体的形成方法

摘要

Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
机译:公开了用于激光腔中的异质晶体及其形成方法。晶体可以是包含基于石榴石的活化剂区域和基于石榴石的Q开关的单块晶体。公开的方法包括用于在宿主上生长不同外延层的水热生长技术。 YAG主体材料可以在一个区域中掺杂有合适的用于发射激光的活化剂离子,并且可以形成有另一区域,该区域掺杂有可饱和吸收剂以形成Q开关。可以一起形成具有受控厚度的区域。形成后,可以切割,抛光并在每一端用镜膜涂覆异质晶体,以用于激光腔中,以使用高频脉冲模式提供高功率发射的短脉冲。

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