Increasing the doping efficiency during proton irradiation

• 1. 质子辐照时掺杂效率的提高 [P] . 中国专利： CN103779194B . 2017.04.12
• 2. 质子辐照时掺杂效率的提高 [P] . 中国专利： CN103779194A . 2014-05-07
• 3. Increasing the doping efficiency during proton irradiation [P] . 美国专利： US9054035B2 . 2015-06-09

  机译： 在质子辐照过程中提高掺杂效率

• 4. INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION [P] . 美国专利： US2015235853A1 . 2015-08-20

  机译： 质子辐照过程中提高掺杂效率

• 5. Increasing the doping efficiency in the case of proton irradiation [P] . 德国专利： DE102012020785B4 . 2014-11-06

  机译： 在质子辐照的情况下提高掺杂效率

• 1. Effects of Hypofractionated and Standard Fractionated Irradiation of Mice Heads with Gamma-Rays and Protons on Their Pheripheral Blood Parameters and Behavior [J] . K. Sh. Voskanyan, A. V. Rzyanina, D. M. Borowicz, 物理科学与应用：英文版 . 2016,第003期
• 2. Acceleration of Protons from a Double-Layer or Multi-Ion-Mixed Foil Irradiated by Ultraintense Lasers [J] . 王伟民, 盛政明, 於陆勒, 等离子体科学和技术：英文版 . 2010,第003期
• 3. Acceleration of Protons from a Double-Layer or Multi-Ion-Mixed Foil Irradiated by Ultraintense Lasers [J] . WANG Weimin, SHENG Zhengming, YU Lule, 等离子体科学和技术（英文版） . 2010,第003期
• 4. Efficiency increase of volume reflection of high-energy protons in a bent crystal with increasing curvature [J] . A.M. Taratin, W. Scandale Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2008,第6期
• 5. Energy response and identification efficiency of CsI(Tl) crystals irradiated with energetic protons [J] . Frosin C., Barlini S., Poggi G., Nuclear Instruments & Methods in Physics Research . 2020,第Jana21期
• 6. External quantum efficiency artifacts in partial‐irradiated GaInP/GaAs/Ge solar cells by protons and electrons [J] . Guo Hongliang, Wu Yiyong, Wang Jie, Energy Science & Engineering . 2018,第3期
• 7. A New Method to Increase the Doping Efficiency of Proton Implantation in a High- Dose Regime [C] . M. Jelinek, J. G. Laven, R. Job, High Purity and High Mobility Semiconductors 13 . 2014
• 8. The effect of erbium hydride on the conversion efficiency to accelerated protons from ultra-short pulse laser irradiated foils. [D] . Offermann, Dustin Theodore. 2008
• 9. Strong hole-doping and robust resistance-decrease in proton-irradiated graphene [O] . Chul Lee, Jiho Kim, SangJin Kim, -1
• 10. Charge collection efficiency degradation on Si diodes irradiated with high energy protons [O] . García López J., Jiménez-Ramos M. C. 2015

• 1. Enhanced Efficiency and Durability of Organic Electroluminescent Devices by Doping in Emitting LayerEnhanced Efficiency and Durability of Organic Electroluminescent Devices by Doping in Emitting Layer [J] . HUANGJing－song ,LIChuan－nan ,等 . 半导体光子学与技术：英文版 . 1999,第3期
• 2. Investigation of neutronic parameters of ^(nat)U spallation target irradiated by low-energy protons [J] . Zohreh Gholamzadeh ,Seyed Mohammad Mirvakili ,Amin Davari . 核技术：英文版 . 2016,第4期
• 3. 提高上海辐照中心辐照装置的利用效率 [C] . . 全国同位素工业应用会议 . 1989
• 4. Al3+掺杂抗静电改性ZnO颜料制备及其质子辐照效应 [A] . 吕金鹏 . 2010