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Single-band and dual-band infrared detectors

机译:单波段和双波段红外探测器

摘要

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
机译:提供了可偏置偏置的双频带红外探测器以及制造这种探测器的方法。红外探测器基于背对背异质结二极管设计,其中探测器结构依次由顶部接触层,单极空穴势垒层,吸收层,单极电子势垒,第二吸收层,第二单极空穴势垒和底部接触层。另外,通过基本上减小吸收层之一的宽度,也可以形成单波段红外检测器。

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