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Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films

机译：用于减少和/或消除SiC外延膜生长中外延层/衬底界面附近的基面位错的预处理方法

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摘要

Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface.

机译：通常提供用于SiC衬底的表面的无损预处理方法，该表面上基本上没有表面形态的劣化。在一特定实施例中，将熔融混合物（例如，包括KOH和缓冲剂）直接施加到SiC衬底的表面上以在其上形成处理过的表面。然后可以在处理过的表面上生长外延膜（例如，SiC），以在接近外延层/衬底界面处实现非常高的（例如，高达并包括100％）BPD到TED的转化率。

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公开/公告号US9644287B2

专利类型
公开/公告日2017-05-09

原文格式PDF
申请/专利权人 UNIVERSITY OF SOUTH CAROLINA;
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申请/专利号US201414557907
发明设计人 TANGALI S. SUDARSHAN;HAIZHENG SONG;TAWHID RANA;
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申请日2014-12-02
分类号H01L21/36;C30B25/18;H01L21/02;H01L21/306;C30B25/14;C30B25/16;C30B29/36;C30B25/20;H01L29/16;
国家 US
入库时间 2022-08-21 13:42:06

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