首页> 外国专利> 9T, 8T, and 7T bitcells for 1R1W and single port static random access memories (SRAM) with single-ended read and single-ended write

9T, 8T, and 7T bitcells for 1R1W and single port static random access memories (SRAM) with single-ended read and single-ended write

机译：用于1R1W的9T，8T和7T位单元以及具有单端读取和单端写入功能的单端口静态随机存取存储器（SRAM）

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摘要

The present patent application describes 9T, 8T, and 7T versions of bitcells used with 1R1W memories. It also describes 9T, 8T, and 7T versions of bitcells used with single port SRAM memories. Different circuits are discussed to support different bitcells and architectures mentioned above. Our 1R1W and single port bitcells and architectures give significant advantages over the conventional bitcells and architectures.

机译：本专利申请描述了与1R1W存储器一起使用的位单元的 9 T， 8 T和 7 T版本。它还描述了与单端口SRAM存储器一起使用的位单元的 9 T， 8 T和 7 T版本。讨论了不同的电路以支持上述不同的位元和体系结构。与传统的位单元和体系结构相比，我们的1R1W和单端口位单元和体系结构具有明显的优势。 展开▼

著录项

公开/公告号US9697888B1

专利类型

公开/公告日2017-07-04

原文格式PDF

申请/专利权人 SKAN TECHNOLOGIES CORPORATION;
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申请/专利号US201615096434

发明设计人 SUDHIR S. MOHARIR;
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申请日2016-04-12

分类号G11C11/419;G11C11/418;

国家 US

入库时间 2022-08-21 13:42:07

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1. 采用8T高性能单端口位单元的高性能双端口SRAM架构 [P] . 中国专利： CN103295624B . 2017.09.22

2. 采用8T高性能单端口位单元的高性能双端口SARM架构 [P] . 中国专利： CN103295624A . 2013-09-11

3. 9T, 8T, and 7T bitcells for 1R1W and single port static random access memories (SRAM) with single-ended read and single-ended write [P] . 美国专利： US9627043B1 . 2017-04-18

机译：用于1R1W的9T，8T和7T位单元以及具有单端读取和单端写入功能的单端口静态随机存取存储器（SRAM）

4. 9T, 8T, and 7T Bitcells for 1R1W and single port static random access memories (SRAM) with single-ended read and single-ended write [P] . 美国专利： US9490008B1 . 2016-11-08

机译：用于1R1W的9T，8T和7T位单元以及具有单端读取和单端写入功能的单端口静态随机存取存储器（SRAM）

5. 6T bitcell for single port static random access memories (SRAM) with single-ended read and single-ended write [P] . 美国专利： US9786358B1 . 2017-10-10

机译：用于单端口静态随机存取存储器（SRAM）的6T位单元，具有单端读取和单端写入

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