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Methods for conformal treatment of dielectric films with low thermal budget
Methods for conformal treatment of dielectric films with low thermal budget
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机译:低热预算介电膜的保形处理方法
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摘要
Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
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