首页> 外国专利> Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material

Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material

机译:在其上生长单晶金刚石的基础材料包括基础衬底,键合的单晶MgO层和异质外延膜,以及在该基础材料上制造单晶金刚石衬底的方法

摘要

A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10−6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.
机译:在其上生长单晶金刚石的单晶金刚石生长基础材料,其至少基底具有线性膨胀系数小于MgO且线性膨胀系数不小于0.5×10 -6 / K;通过结合法在生长单晶金刚石的基础衬底的表面上形成单晶MgO层;该膜由在单晶MgO层上异质外延生长的铱膜,铑膜和铂膜中的任一种构成。

著录项

  • 公开/公告号US9752255B2

    专利类型

  • 公开/公告日2017-09-05

    原文格式PDF

  • 申请/专利权人 HITOSHI NOGUCHI;SHOZO SHIRAI;

    申请/专利号US201113159074

  • 发明设计人 SHOZO SHIRAI;HITOSHI NOGUCHI;

    申请日2011-06-13

  • 分类号C30B25/18;C30B29/04;

  • 国家 US

  • 入库时间 2022-08-21 13:43:01

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