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Transistor with field electrodes and improved avalanche breakdown behavior

机译：带有场电极的晶体管和改善的雪崩击穿性能

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摘要

A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.

机译：晶体管单元在半导体主体中包括第一掺杂类型的漂移区域，第一掺杂类型的源极区域，第二掺杂类型的主体区域和第一掺杂类型的漏极区域。体区布置在源极区和漂移区之间。漂移区布置在主体区和漏极区之间。栅电极与主体区域相邻，并且通过栅电介质与主体区域电绝缘，并且场电极通过场电极电介质与漂移区电绝缘。漂移区包括具有比漂移区的邻近雪崩区的部分更高的掺杂浓度的雪崩区，并且该雪崩区在垂直于电流流动方向的方向上与场电极电介质间隔开。场电极布置在针形沟槽中。

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公开/公告号US9812563B2

专利类型
公开/公告日2017-11-07

原文格式PDF
申请/专利权人 INFINEON TECHNOLOGIES AG;
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申请/专利号US201615182244
发明设计人 RALF SIEMIENIEC;MARKUS ZUNDEL;KARL-HEINZ BACH;FRANZ HIRLER;CHRISTIAN KAMPEN;WERNER SCHUSTEREDER;
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申请日2016-06-14
分类号H01L29/78;H01L29/06;H01L29/40;H01L29/66;H01L29/10;H01L21/265;H01L21/324;
国家 US
入库时间 2022-08-21 13:43:26

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