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MWIR photodetector with compound barrier with P-N junction
MWIR photodetector with compound barrier with P-N junction
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机译：带有P-N结的复合势垒的MWIR光电探测器
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摘要
The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.
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