首页> 外国专利> Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

机译：使用Se-Ag2Se核壳纳米粒子制造A（C）IGS基薄膜的方法，由其制备的A（C）IGS基薄膜以及包括A（C）IGS基薄膜的串联太阳能电池

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摘要

A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag₂Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag₂Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag₂Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

机译：一种使用Se-Ag _{2 Se核壳纳米粒子，A（C）IGS制备Ag-（Cu-）In-Ga-Se（A（C）IGS）基薄膜的方法公开了通过该方法制造的基于ASTM的薄膜，以及具有A（C）IGS薄膜的串联太阳能电池。更特别地，一种通过用包含Se-Ag _{2 的浆料非真空涂覆衬底来制造致密的Ag-（Cu-）In-Ga-Se（A（C）IGS）基薄膜的方法。公开了一种Se> Se核-壳纳米颗粒，通过该方法制造的基于A（C）IGS的薄膜以及包括该基于A（C）IGS的薄膜的串联太阳能电池。根据本发明，通过在制造（C）IGS薄膜的过程中施加Se-Ag _{2 Se核-壳纳米粒子来制造包括Ag的A（C）IGS基薄膜，从而提供具有宽带隙的基于A（C）IGS的薄膜。}}}

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公开/公告号US9634162B2

专利类型
公开/公告日2017-04-25

原文格式PDF
申请/专利权人 KOREA INSTITUTE OF ENERGY RESEARCH;
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申请/专利号US201314412055
发明设计人 KYUNG HOON YOON;JAE HO YUN;SEOUNGKYU AHN;JOO HYUNG PARK;JIHYE GWAK;JUN SIK CHO;YOUNG JOO EO;KEE SHIK SHIN;JIN-SU YOO;SEJIN AHN;ARA CHO;
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申请日2013-09-03
分类号H01L31/0352;C01B19/00;H01L31/18;H01L31/032;
国家 US
入库时间 2022-08-21 13:44:01

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