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Controlled crystallization to grow large grain organometal halide perovskite thin film
Controlled crystallization to grow large grain organometal halide perovskite thin film
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机译:控制结晶以生长大晶粒有机金属卤化物钙钛矿薄膜
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摘要
A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.
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