首页> 外国专利> THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY HAVING THE THIN FILM TRANSISTOR

THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY HAVING THE THIN FILM TRANSISTOR

机译:薄膜晶体管,制造薄膜晶体管和薄膜晶体管的方法,制造薄膜晶体管和平板显示器的方法具有薄膜晶体管

摘要

A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.
机译:公开了一种薄膜晶体管(TFT),制造该TFT的方法以及具有该TFT的平板显示器。一方面,TFT包括衬底和形成在衬底上方的有源层,其中有源层由氧化物半导体形成,并且其中有源层包括两个相对的侧面。 TFT还包括形成在有源层的相对侧的源极和漏极区域,在有源层之上形成的第一绝缘层,在有源层之上形成的栅电极,形成为覆盖第一绝缘层和栅极的第二绝缘层。电极,以及形成在源极和漏极区域上并与第二绝缘层接触的第一导电层。

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