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Crystal growth method of rare earth sesquisulfides
Crystal growth method of rare earth sesquisulfides
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机译：稀土倍半硫化物的晶体生长方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of growing a crystal of rare earth sesquisulfide from a melt.SOLUTION: A quartz reaction vessel containing (a1) a mixture of rare earth sesquisulfide (rare earth element: one kind of the rare earth group (hereinafter Ln) of Y, Sc, and lanthanoid) and tin sulfide, (a2) a mixture of rare earth sesquisulfide including a plurality of rare earth elements (two or more kinds of the Ln) and tin sulfide, or (a3) a mixture of rare earth sesquisulfide and a stoichiometric amount of rare earth element (one kind, two kinds or more of the Ln) for generating tin monosulfide, Sn and S, and excessive SnS as a solvent is heated to a temperature higher than the melting point of SnS, and held until a generated melt becomes completely homogeneous, a temperature gradient is formed in the reaction vessel to cause vaporization of SnS and substance migration from a crucible to a low-temperature part in the reaction vessel, and then a sulfide crystal including high-temperature transformation γ-LnShaving a ThPstructure can be grown, and thereby, a rare earth sulfide crystal accompanied by sulfide doping by Sn is crystallized and grown.
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