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4h-SiC insulated gate bipolar transistor, manufacturing method thereof, and power conversion device
4h-SiC insulated gate bipolar transistor, manufacturing method thereof, and power conversion device
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机译：4h-SiC绝缘栅双极晶体管，其制造方法和功率转换装置
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摘要
According to the structure of the present invention, the thickness of the backside silicide region containing Al in contact with the backside collector electrode is thinner than that of the frontside silicide layer, less SiC is eroded by silicidation, and the thermal load during the formation of silicide is also less. In addition, it is possible to provide a device in which the minority carrier lifetime in the collector p + collector region due to silicide formation is small and reliability is not deteriorated such as deterioration of energization.
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