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Vertical Schottky barrier diode and method of manufacturing vertical Schottky barrier diode
Vertical Schottky barrier diode and method of manufacturing vertical Schottky barrier diode
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机译：垂直肖特基势垒二极管及其制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a technique that improves a problem that a first electrode layer is easily separated from an insulation layer.SOLUTION: The semiconductor device comprises: a semiconductor layer formed of a semiconductor; an insulation layer having electrical insulation properties and covering a part of the semiconductor layer; a first electrode layer formed on the semiconductor layer, having work function of 0.5 eV or more of the electron affinity of the semiconductor layer, and forming a field plate region by extending to a surface of the insulation layer; and a second electrode layer covering the first electrode layer and covering a part of the insulation layer.
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