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COMPOUND THIN-FILM SOLAR CELL, MANUFACTURING METHOD FOR COMPOUND THIN-FILM SOLAR CELL, AND INSPECTION METHOD FOR COMPOUND THIN-FILM SOLAR CELL

机译:复合型薄膜太阳能电池,复合型薄膜太阳能电池的制造方法以及复合型薄膜太阳能电池的检查方法

摘要

PROBLEM TO BE SOLVED: To provide a compound thin-film solar cell whose quality can be managed easily, a manufacturing method for the compound thin-film solar cell, and an inspection method for the compound thin-film solar cell.SOLUTION: A compound thin-film solar cell includes: a molybdenum electrode layer; a light absorption layer formed of a CIGS-based or CZTS-based p-type compound semiconductor; a buffer layer formed of an n-type compound semiconductor; and an intermediate layer containing at least one element of Mo, S, and Se. The molybdenum electrode layer, the intermediate layer, the light absorption layer, and the buffer layer are arranged in this order. The resistance value of the bonding resistance by the bonding between the intermediate layer and the light absorption layer is a first resistance value, and the resistance value of the bonding resistance by the bonding between the light absorption layer and the buffer layer is a second resistance value. The ratio of the first resistance value to the second resistance value is 0.2 or less.SELECTED DRAWING: Figure 2
机译:要解决的问题:提供一种易于管理质量的复合薄膜太阳能电池,该复合薄膜太阳能电池的制造方法以及该复合薄膜太阳能电池的检查方法。薄膜太阳能电池包括:钼电极层;由基于CIGS或基于CZTS的p型化合物半导体形成的光吸收层;由n型化合物半导体形成的缓冲层;中间层包含Mo,S和Se中的至少一种元素。钼电极层,中间层,光吸收层和缓冲层以该顺序排列。通过中间层与光吸收层之间的结合而产生的结合电阻的电阻值为第一电阻值,并且通过光吸收层与缓冲层之间的结合而产生的结合电阻的电阻值为第二电阻值。 。第一电阻值与第二电阻值之比为0.2或更小。

著录项

  • 公开/公告号JP2017152661A

    专利类型

  • 公开/公告日2017-08-31

    原文格式PDF

  • 申请/专利权人 TOPPAN PRINTING CO LTD;

    申请/专利号JP20160036416

  • 发明设计人 SHIBAYAMA NAOYUKI;

    申请日2016-02-26

  • 分类号H01L31/0749;

  • 国家 JP

  • 入库时间 2022-08-21 13:59:02

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