首页> 外国专利> SEMICONDUCTOR NANOPARTICLE AND PRODUCTION METHOD OF THE SAME, FLUORESCENT PROBE USING SEMICONDUCTOR NANOPARTICLE, LED DEVICE, WAVELENGTH CONVERSION FILM AND PHOTO-ELECTRIC CONVERSION DEVICE

SEMICONDUCTOR NANOPARTICLE AND PRODUCTION METHOD OF THE SAME, FLUORESCENT PROBE USING SEMICONDUCTOR NANOPARTICLE, LED DEVICE, WAVELENGTH CONVERSION FILM AND PHOTO-ELECTRIC CONVERSION DEVICE

机译：半导体纳米粒子及其制造方法，使用半导体纳米粒子，LED装置，波长转换膜和光电转换装置的荧光探针

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摘要

PROBLEM TO BE SOLVED: To provide a semiconductor nanoparticle and a production method of the semiconductor nanoparticle containing no elements such as Cd, Hg and Pb, having a narrow half-value width at an emission peak wavelength and a high fluorescent quantum yield.;SOLUTION: A semiconductor nanoparticle has a core crystal region having a chalcopyrite crystalline structure constituted by a group 11 element, a group 13 element and a group 16 element, and a shell crystal region formed in a periphery of the core crystal region and containing a group 12 element and a group 16 element, and further has a solid solution layer between the core crystal region and the shell crystal region, the solid solution layer comprising an element constituting the core crystal region and an element constituting the shell crystal region. The thickness of the solid solution layer is 10 or more and 90% or less of a radius of the semiconductor nanoparticle. In two elements except for the group 16 element constituting the core crystal region, a molar amount of the element having a smaller bonding force to the group 16 element is greater than a molar amount of the element having a larger bonding force to the group 16 element.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT

机译：解决的问题：提供一种不包含Cd，Hg，Pb等元素的半导体纳米粒子及其制造方法，该半导体纳米粒子的发光峰值波长的半峰宽度窄，荧光量子产率高。：半导体纳米粒子具有由第11族元素，第13族元素和第16族元素构成的具有黄铜矿晶体结构的核心晶体区域，以及形成在该核心晶体区域的周围且包含第12族的壳晶体区域。元素和16族元素，并且在芯晶体区域和壳晶体区域之间还具有固溶体层，该固溶体层包括构成芯晶体区域的元素和构成壳晶体区域的元素。固溶体层的厚度为半导体纳米粒子的半径的10以上且90％以下。在除了构成核心晶体区域的第16族元素之外的两个元素中，与第16族元素具有较小键合力的元素的摩尔量大于对第16族元素具有较大键合力的元素的摩尔量。。;选定的图纸：图1;版权：（C）2017，JPO＆INPIT

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公开/公告号JP2017122175A

专利类型
公开/公告日2017-07-13

原文格式PDF
申请/专利权人 KONICA MINOLTA INC;
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申请/专利号JP20160001703
发明设计人 KITANO TOMOYO;
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申请日2016-01-07
分类号C09K11/62;C09K11/08;C09K11/88;B82Y20/00;B82Y40/00;B82Y30/00;G03B21/14;H01L33/50;G02B5/20;
国家 JP
入库时间 2022-08-21 14:01:37

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