首页> 外国专利> PREPARING METHOD OF REDUCED GRAPHENE OXIDE FILM REDUCED GRAPHENE OXIDE FILM PREPARED BY THE SAME AND GRAPHENE ELECTRODE INCLUDING THE REDUCED GRAPHENE OXIDE FILM

PREPARING METHOD OF REDUCED GRAPHENE OXIDE FILM REDUCED GRAPHENE OXIDE FILM PREPARED BY THE SAME AND GRAPHENE ELECTRODE INCLUDING THE REDUCED GRAPHENE OXIDE FILM

机译：还原的氧化石墨膜的制备方法还原的氧化石墨膜由相同的和石墨烯电极制备，包括还原的氧化石墨膜

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摘要

The present invention relates to a method for producing a reduced graphene oxide film, a reduced graphene oxide film produced by the above method, a graphene electrode comprising the reduced graphene oxide film, an organic thin film transistor And an antistatic film comprising the reduced graphene oxide film.;

机译：本发明涉及还原性氧化石墨烯膜的制造方法，通过上述方法制造的还原性氧化石墨烯膜，包含该还原性氧化石墨烯膜的石墨烯电极，有机薄膜晶体管以及包含该还原性氧化石墨烯的抗静电膜。电影。;

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公开/公告号KR101664979B1

专利类型
公开/公告日2016-10-11

原文格式PDF
申请/专利权人 서울대학교산학협력단;
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申请/专利号KR20150087544
发明设计人 김성현;신경환;장정식;
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申请日2015-06-19
分类号H01L51/10;C01B31/04;H01B5/14;
国家 KR
入库时间 2022-08-21 14:11:49

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