首页> 外国专利> THERMAL TREATMENT METHOD OF POLYTHIOPHENE FILM BY CONTROLLING COOLING RATE

THERMAL TREATMENT METHOD OF POLYTHIOPHENE FILM BY CONTROLLING COOLING RATE

机译:控制冷却速度的聚噻吩膜的热处理方法

摘要

The present invention relates to a method for annealing a polythiophene thin film by controlling a cooling rate, and more particularly, to a method of annealing a polythiophene (e.g., P3HT) thin film coated on a substrate at a temperature near its melting point, By performing the heat treatment of the conditions, it is possible to improve / change the molecular orientation (Orientation), morphology and crystallinity of the polythiophene thin film, and as a result, And a field-effect transistors (FETs) including the heat-treated polythiophene thin film.
机译:本发明涉及通过控制冷却速率来退火聚噻吩薄膜的方法,更具体地,涉及在接近其熔点的温度下对涂覆在基板上的聚噻吩(例如P3HT)薄膜进行退火的方法。通过进行该条件的热处理,可以提高/改变聚噻吩薄膜的分子取向(取向),形态和结晶性,其结果是,可以进行热处理后的场效应晶体管(FET)。聚噻吩薄膜。

著录项

  • 公开/公告号KR101664664B1

    专利类型

  • 公开/公告日2016-10-11

    原文格式PDF

  • 申请/专利权人 인천대학교 산학협력단;

    申请/专利号KR20150031371

  • 发明设计人 박영돈;김혜수;

    申请日2015-03-06

  • 分类号H01L29/786;H01L21/02;H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-21 14:11:48

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