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CD A METHOD FOR CONTROLLING CD OF ETCH FEATURES
CD A METHOD FOR CONTROLLING CD OF ETCH FEATURES
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机译：CD一种控制唱片特征CD的方法
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摘要
to form a stack, is disposed below a photoresist mask is patterned, the intermediate mask critical dimension of the etched features (feature) of the functional organic mask layer etch layer disposed below disposed below the layer: a (CD critical dimension) a method is provided for control. The intermediate mask layer is opened by selectively etching the intermediate mask layer for the patterned photoresist mask. The functional organic mask layer is opened. Functional organic layer mask opening includes the step of stopping the flow of the forming step, the plasma passed through an open gas containing COS, and gases open. The etch layer is etched away. ; functional organic mask layer, and etching feature, the intermediate mask layer, COS, plasma
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