首页> 外国专利> 3D NAND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF FILMS FOR IMPROVED VERTICAL ETCH PERFORMANCE IN 3D NAND MEMORY DEVICES

3D NAND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF FILMS FOR IMPROVED VERTICAL ETCH PERFORMANCE IN 3D NAND MEMORY DEVICES

机译:3D NAND等离子体增强的化学气相沉积膜,可改善3D NAND存储器设备中的垂直刻蚀性能

摘要

Implementations of the present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.
机译:本公开的实施方式总体上涉及结合了高纵横比特征定义的薄膜及其形成方法。随着栅极高度的增加, 3 D与非门堆叠会经受更高的深宽比蚀刻。由于蚀刻技术的当前限制,垂直蚀刻轮廓通常随着进入栅堆叠的深度的增加而逐渐变细。发明人设计了独特的沉积方案,该方案通过新颖的等离子体增强化学气相沉积(PECVD)膜沉积方法来补偿深沟槽中的蚀刻性能下降。发明人发现,通过对所沉积的膜(例如氮化硅)的各种性质(例如,折射率,膜的应力,膜中的掺杂剂浓度)进行分级,可以通过补偿变化来获得更均匀的蚀刻轮廓。在干和湿蚀刻速率上。

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