首页>
外国专利>
ORGANIC SEMICONDUCTOR ELEMENT COMPRISING LINEAR SOURCE ELECTRODE, LINEAR DRAIN ELECTRODE AND LINEAR GATE ELECTRODE IN PARALLEL AND MANUFACTURING METHOD THEREOF, FABRIC STRUCTURE AND NONWOVEN STRUCTURE USING ORGANIC SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE USING ORGANIC SEMICONDUCTOR ELEMENT, FABRIC STRUCTURE OR NONWOVEN STRUCTURE
ORGANIC SEMICONDUCTOR ELEMENT COMPRISING LINEAR SOURCE ELECTRODE, LINEAR DRAIN ELECTRODE AND LINEAR GATE ELECTRODE IN PARALLEL AND MANUFACTURING METHOD THEREOF, FABRIC STRUCTURE AND NONWOVEN STRUCTURE USING ORGANIC SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE USING ORGANIC SEMICONDUCTOR ELEMENT, FABRIC STRUCTURE OR NONWOVEN STRUCTURE
Provided is an organic semiconductor device. According to an embodiment of the present invention, the organic semiconductor device comprises: a cover layer extended in a first direction; a linear source electrode, a linear drain electrode, and a linear gate electrode extended in the first direction, and spaced from one another to be in parallel inside the cover layer; and an organic semiconductor material layer arranged inside the cover layer, and surrounding the linear source electrode and the drain electrode.
展开▼
