首页> 外国专利> PRODUCTION METHOD OF SILICON-GRAPHENE HETEROJUNCTION SOLAR CELL AND SILICON-GRAPHENE HETEROJUNCTION SOLAR CELL PRODUCTED BY THE SAME

PRODUCTION METHOD OF SILICON-GRAPHENE HETEROJUNCTION SOLAR CELL AND SILICON-GRAPHENE HETEROJUNCTION SOLAR CELL PRODUCTED BY THE SAME

机译:硅-石墨烯异质结太阳能电池的生产方法及同时生产的硅-石墨烯异质结太阳能电池

摘要

The present invention relates to a method for manufacturing a silicon-graphene heterojunction solar cell and a silicon-graphene heterojunction solar cell manufactured by the same. More particularly, the method includes the steps of: (a) preparing a crystalline n-type silicon substrate; (b) forming an SiO_2 insulation layer on the crystalline n-type silicon substrate; (c) forming a patterned electrode by using a mask patterned on the insulation layer; (d) etching the SiO_2 insulation layer of which an upper electrode is not patterned in step (c) to expose the crystalline n-type silicon substrate in an area with the upper electrode, which is not patterned; and (e) inducing a graphene-silicon pn junction by transferring p-type doped graphene to the silicon substrate, exposed in step (d), and an upper portion of a front side electrode.
机译:本发明涉及硅-石墨烯异质结太阳能电池的制造方法以及由其制造的硅-石墨烯异质结太阳能电池。更特别地,该方法包括以下步骤:(a)制备晶体n型硅衬底; (b)在结晶的n型硅衬底上形成SiO_2绝缘层; (c)通过使用在绝缘层上构图的掩模形成构图的电极; (d)在步骤(c)中蚀刻其上电极没有被图案化的SiO 2绝缘层,以在具有未被图案化的上电极的区域中暴露出结晶的n型硅衬底; (e)通过将p型掺杂的石墨烯转移到在步骤(d)中暴露的硅衬底和前侧电极的上部来诱导石墨烯-硅pn结。

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