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A PROCESS FOR PREPARING CATALYST-FREE, 3-DIMENSIONAL 'INDIUM TIN OXIDE' NANOSTRUCTURE CAPABLE OF ENHANCING SHORT CIRCUIT CURRENT IN A SOLAR CELL MADE THEREWITH.
A PROCESS FOR PREPARING CATALYST-FREE, 3-DIMENSIONAL 'INDIUM TIN OXIDE' NANOSTRUCTURE CAPABLE OF ENHANCING SHORT CIRCUIT CURRENT IN A SOLAR CELL MADE THEREWITH.
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机译：一种制备无催化剂的三维三维氧化铟锡纳米结构的方法，该工艺可以增强太阳能电池中的短路电流。
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摘要
This invention relates to the production of catalyst-free 3-dimensional Indium-Tin Oxide nanostructure which is capable of enhancing short circuit current in a solar cell made therewith.The relevant process comprises selecting a fluorine-doped tin oxide (FTO) coated glass, cleaning it and subjecting the cleaned substrate to DC magnetron sputtering for deposition on ITO nanorods under optimum temperature(from 250°C to 320°C) and power density during deposition 1.5 Watt/cm2. The specification also deals with formation of solar cells with ITO nanorods by fabricating a-silicon based p-i-n structure on said nanorods, using selective reactants and dopants for formation of p-type and n-type layers. Figs. 1, 2, 3 and 4 of the drawings define and illustrate the invention.
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机译：本发明涉及一种无催化剂的三维氧化铟锡纳米结构的生产，该纳米结构能够增强由其制成的太阳能电池中的短路电流。相关方法包括选择一种掺氟掺杂氧化锡（FTO）的玻璃，对其进行清洗，然后对清洗后的基板进行直流磁控溅射，以使其在最佳温度（250°C至320°C）下以1.5 W / cm2的功率密度沉积在ITO纳米棒上。该说明书还涉及通过使用选择性反应物和掺杂剂形成p型和n型层，通过在所述纳米棒上制造基于硅的p-i-n结构，来形成具有ITO纳米棒的太阳能电池。无花果附图的图1、2、3和4定义和说明了本发明。
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