首页> 外国专利> RESIST TECHNOLOGY BASED ON POLYARYLENE SULPHIDE : (PAS) AS A UNIQUE POLYMER MATERIAL FOR SEMI CONDUCTOR FABRICATION TECHNOLOGY.

RESIST TECHNOLOGY BASED ON POLYARYLENE SULPHIDE : (PAS) AS A UNIQUE POLYMER MATERIAL FOR SEMI CONDUCTOR FABRICATION TECHNOLOGY.

机译：基于多烯硫化物（PAS）作为半导体制造技术的独特聚合物的抗蚀剂技术。

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摘要

The present Invention relates to Poly (methyl(4-phenylthiophenyl) sulfoniumtrifluoromethane sulfonate] (PAS) is being reported for the first time as a novel non-chemically amplified photo-resist (n-CAR) material that achieves patterning on silicon or HMDS primed wafers by following standard semiconductor fabrication processes using various wavelengths including 365nm (i-line), 248 nm (DUV) 13.5 nm (EUV) with high sensitivity. This invention addresses many of the road blocks in semiconductor Industry for fabricating microelectronic devices with 20 nm nodes and beyond.

机译：发明内容本发明涉及聚（4-苯基硫代苯基）三氟甲烷磺酸]]（PAS）作为一种新型的非化学放大的光致抗蚀剂（n-CAR）材料，该材料可在硅或经HMDS处理的底漆上实现图案化。通过遵循标准的半导体制造工艺，使用具有高灵敏度的各种波长（包括365nm（i线），248nm（DUV）和13.5nm（EUV））来加工晶圆，本发明解决了半导体工业中制造20nm微电子器件的许多障碍节点及其他。

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公开/公告号IN201611018061A

专利类型
公开/公告日2016-06-17

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申请/专利号IN201611018061
发明设计人 DR SATYENDRA P PAL;MR GURUPRASAD REDDY;DR SATINDER K SHARMA;DR C P PRADEEP;DR SUBRATA GHOSH;DR KENNETH E GONSALVES;
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申请日2016-05-26
分类号C08G75/00;
国家 IN
入库时间 2022-08-21 14:24:46

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