首页> 外国专利> Semiconductor chip including digital logic circuit including linear-shaped conductive structures having electrical connection areas located within inner region between transistors of different type and associated methods

Semiconductor chip including digital logic circuit including linear-shaped conductive structures having electrical connection areas located within inner region between transistors of different type and associated methods

机译:包括数字逻辑电路的半导体芯片,该数字逻辑电路包括具有位于不同类型的晶体管之间的内部区域内的电连接区域的线性导电结构以及相关方法

摘要

A first linear-shaped conductive structure (LCS) forms a gate electrode (GE) of a first transistor of a first transistor type. A second LCS forms a GE of a first transistor of a second transistor type. A third LCS forms a GE of a fourth transistor of the first transistor type. A fourth LCS forms a GE of a fourth transistor of the second transistor type. Transistors of the first transistor type are collectively separated from transistors of the second transistor type by an inner region. Each of the first, second, third, and fourth LCS's has a respective electrical connection area. At least two of the electrical connection areas of the first, second, third, and fourth LCS's are located within the inner region. The first and fourth transistors of the first transistor type and the first and fourth transistors of the second transistor type form part of a cross-coupled transistor configuration.
机译:第一线性导电结构(LCS)形成第一晶体管类型的第一晶体管的栅电极(GE)。第二LCS形成第二晶体管类型的第一晶体管的GE。第三LCS形成第一晶体管类型的第四晶体管的GE。第四LCS形成第二晶体管类型的第四晶体管的GE。第一晶体管类型的晶体管通过内部区域与第二晶体管类型的晶体管共同地分开。第一,第二,第三和第四LCS中的每个具有各自的电连接区域。第一,第二,第三和第四LCS的至少两个电连接区域位于内部区域内。第一晶体管类型的第一和第四晶体管以及第二晶体管类型的第一和第四晶体管形成交叉耦合晶体管配置的一部分。

著录项

  • 公开/公告号US9208279B2

    专利类型

  • 公开/公告日2015-12-08

    原文格式PDF

  • 申请/专利权人 TELA INNOVATIONS INC.;

    申请/专利号US201414303587

  • 发明设计人 SCOTT T. BECKER;JIM MALI;CAROLE LAMBERT;

    申请日2014-06-12

  • 分类号H01L27/088;G06F17/50;H01L27/11;H01L27/02;H01L27/092;H01L23/538;H01L27/118;H01L23/498;

  • 国家 US

  • 入库时间 2022-08-21 14:27:43

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