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Latch circuit and latch circuit array including the same

机译:锁存电路和包括该锁存电路的锁存电路阵列

摘要

A latch circuit may include: first to Nth storage nodes where N is an even number equal to or more than four; first to Nth pairs of transistors each including a PMOS transistor and an NMOS transistor which are coupled in series through a corresponding storage node among the first to Nth storage nodes, wherein each of the first to Nth storage nodes is coupled to a gate of the NMOS transistor of the transistor pair at the previous stage and a gate of the PMOS transistor of the transistor pair at the next stage; first to Nth PMOS transistors suitable for driving corresponding storage nodes among the first to Nth storage nodes to a high level; and first to Nth NMOS transistors suitable for driving corresponding storage nodes among the first to Nth storage nodes to a low level.
机译:锁存电路可以包括:第一至第N个存储节点,其中N是等于或大于4的偶数;第一至第N对晶体管,每个对均包括通过第一至第N存储节点中的相应存储节点串联耦合的PMOS晶体管和NMOS晶体管,其中第一至第N存储节点中的每个耦合至NMOS的栅极前一级晶体管对的晶体管和下一级晶体管对的PMOS晶体管的栅极;第一至第N PMOS晶体管,适于将第一至第N存储节点中的对应存储节点驱动为高电平;第一至第N NMOS晶体管,适于将第一至第N存储节点中的对应存储节点驱动至低电平。

著录项

  • 公开/公告号US9337813B1

    专利类型

  • 公开/公告日2016-05-10

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号US201414569440

  • 发明设计人 JAE-SEUNG LEE;

    申请日2014-12-12

  • 分类号H03K3/356;

  • 国家 US

  • 入库时间 2022-08-21 14:28:07

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