首页> 外国专利> On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures

On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures

机译:具有特性阻抗调整技术的片上垂直三维微带线和设计结构

摘要

A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.
机译:提供了用于改善的可调特性阻抗的垂直三维(3D)微带线结构,其制造方法和设计结构。更具体地,提供了一种方法,该方法包括在线(BEOL)堆叠的后端内形成第一微带线结构。该方法进一步包括形成第二微带线结构,该第二微带线结构与BEOL叠层分开预定水平距离。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号