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Method of manufacturing zinc oxide thin film, method of manufacturing thin film transistor, zinc oxide thin film, thin film transistor, and transparent oxide wiring

机译：氧化锌薄膜的制造方法，薄膜晶体管的制造方法，氧化锌薄膜，薄膜晶体管和透明氧化物配线

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摘要

A method of manufacturing a zinc oxide thin film includes: immersing a base having a conductive portion in at least part of the base, in a solution containing zinc ions, hydroxide ions, and zinc complex ions; and by applying an alternating current to the conductive portion, forming a zinc oxide thin film on a region of the base, the region including the conductive portion.

机译：制造氧化锌薄膜的方法包括：将具有导电部分的基底至少部分地浸入包含锌离子，氢氧根离子和锌络合离子的溶液中;通过向导电部分施加交流电，在基底的包括导电部分的区域上形成氧化锌薄膜。

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公开/公告号US9337320B2

专利类型
公开/公告日2016-05-10

原文格式PDF
申请/专利权人 NIKON CORPORATION;
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申请/专利号US201414570191
发明设计人 YASUTAKA NISHI;MAKOTO NAKAZUMI;
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申请日2014-12-15
分类号H01L21/02;H01L29/786;H01L29/66;C25D9/08;H01L29/45;H01L27/12;C25D5/02;H01L21/768;H01L29/24;
国家 US
入库时间 2022-08-21 14:28:08

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