首页> 外国专利> Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating step

Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating step

机译:beol铜衬里种子上的石墨烯牺牲沉积层可缓解衬里和电镀步骤之间的排队时间问题

摘要

After forming a copper seed layer on a diffusion barrier layer present on sidewalls and a bottom surface of at least one opening, a graphene sacrificial layer is deposited over the copper seed layer before the copper seed layer is exposed to an environment that oxidizes the copper seed layer, thus providing process flexibility for longer queue times (Q-times) between copper seed layer deposition and copper plating. Next, the graphene sacrificial layer is subjected to a plasma treatment to introduce disorders and defects into the graphene sacrificial layer for removal just before the copper plating. The entire structure is then immersed in a copper plating solution. The copper plating solution dissolves the plasma treated graphene sacrificial layer and forms a copper-containing layer on the re-exposed copper seed layer.
机译:在存在于至少一个开口的侧壁和底表面上的扩散阻挡层上形成铜晶种层之后,在铜晶种层暴露于氧化铜晶种的环境之前,在铜晶种层上沉积石墨烯牺牲层。层,从而为铜籽晶层沉积和镀铜之间的较长排队时间(Q次)提供了工艺灵活性。接下来,对石墨烯牺牲层进行等离子体处理,以在镀铜之前将无序和缺陷引入石墨烯牺牲层中以去除。然后将整个结构浸入镀铜溶液中。镀铜溶液溶解经等离子体处理的石墨烯牺牲层,并在再暴露的铜籽晶层上形成含铜层。

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号