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Electronic gate enhancement of Schottky junction solar cells
Electronic gate enhancement of Schottky junction solar cells
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机译：肖特基结太阳能电池的电子门增强
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摘要
Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
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