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Semiconductor device having Schmitt trigger NAND circuit and Schmitt trigger inverter

机译:具有施密特触发器NAND电路和施密特触发器反相器的半导体器件

摘要

A nonvolatile semiconductor device which can be driven at low voltage is provided. A nonvolatile semiconductor device with low power consumption is provided. A Schmitt trigger NAND circuit and a Schmitt trigger inverter are included. Data is held in a period when the supply of power supply voltage is continued, and a potential corresponding to the data is stored at a node electrically connected to a capacitor before a period when the supply of power supply voltage is stopped. By utilizing a change in channel resistance of a transistor whose gate is connected to the node, the data is restored in response to the restart of the supply of power supply voltage.
机译:提供了可以在低电压下驱动的非易失性半导体器件。提供了一种具有低功耗的非易失性半导体器件。包括施密特触发器NAND电路和施密特触发器反相器。在继续提供电源电压的时段中保持数据,并且在停止提供电源电压的时段之前,将与该数据相对应的电势存储在电连接至电容器的节点上。通过利用其栅极连接到该节点的晶体管的沟道电阻的变化,响应于电源电压的重新供应来恢复数据。

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