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Silicon-Based Rib-Waveguide Modulator And Fabrication Method Thereof

机译:硅基肋波导调制器及其制造方法

摘要

Various structures of an electro-optic device and fabrication methods thereof are described. A fabrication method is provided to fabricate an electro-optic device which may include a silicon-based rib-waveguide modulator which includes a first top silicon layer, having a first doped region that is at least partially doped with dopants of a first conducting type, a second top silicon layer, having a second doped region that is at least partially doped with dopants of a second conducting type, and a thin dielectric gate layer disposed between the first top silicon layer and the second top silicon layer. The second doped region may be at least in part directly over the first doped region. The modulator may also include a rib waveguide formed on the second top silicon layer, a first electric contact formed on the first top silicon layer, and a second electric contact formed on the second top silicon layer.
机译:描述了电光器件的各种结构及其制造方法。提供了一种制造方法,以制造电光器件,该电光器件可以包括基于硅的肋波导调制器,该调制器包括第一顶部硅层,该第一顶部硅层具有至少部分地掺杂有第一导电类型的掺杂剂的第一掺杂区,第二顶部硅层,具有第二掺杂区,该第二掺杂区至少部分地掺杂有第二导电类型的掺杂剂,以及薄介电栅层,其设置在第一顶部硅层和第二顶部硅层之间。第二掺杂区可以至少部分地直接在第一掺杂区上方。调制器还可包括形成在第二顶部硅层上的肋状波导,形成在第一顶部硅层上的第一电触点以及形成在第二顶部硅层上的第二电触点。

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