首页> 外国专利> Chemically amplified resist composition, negative chemically amplified resist composition, resist film using the same, resist-coated mask blanks, photomask manufacturing method and pattern forming method, and electronic device manufacturing method

Chemically amplified resist composition, negative chemically amplified resist composition, resist film using the same, resist-coated mask blanks, photomask manufacturing method and pattern forming method, and electronic device manufacturing method

机译：化学放大型抗蚀剂组合物，负化学放大型抗蚀剂组合物，使用该组合物的抗蚀剂膜，涂布抗蚀剂的掩模坯料，光掩模的制造方法和图案形成方法以及电子设备的制造方法

页面导航

摘要
著录项
相似文献

摘要

A chemical amplification resist composition according to the present invention includes (A) a compound including a triarylsulfonium cation having one or more fluorine atoms and capable of generating an acid with a volume of 240 Å3 or higher by irradiation of active rays or radiation; and (B) a compound including a phenolic hydroxyl group.

机译：根据本发明的化学放大抗蚀剂组合物包括：（A）包含三芳基ulf阳离子的化合物，该三芳基ulf阳离子具有一个或多个氟原子并且能够通过活性射线或放射线的照射而产生体积为240Å3或更高的酸; （B）具有酚羟基的化合物。

著录项

公开/公告号JP5856991B2

专利类型
公开/公告日2016-02-10

原文格式PDF
申请/专利权人富士フイルム株式会社;
展开▼

申请/专利号JP20130051817
发明设计人土村智孝;高橋孝太郎;
展开▼

申请日2013-03-14
分类号G03F7/039;G03F7/004;G03F7/038;C07C381/12;C07C43/178;C09K3;G03F1/56;C07D217/08;C07D295/22;
国家 JP
入库时间 2022-08-21 14:39:44

相似文献

专利
外文文献
中文文献