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Thickness-shear vibration type crystal piece, thickness-shear vibration type crystal piece with the electrode, the crystal vibration plate, crystal oscillator, and crystal oscillator

机译:厚度剪切振动型晶体片,具有电极的厚度剪切振动型晶体片,晶体振动板,晶体振荡器和晶体振荡器

摘要

PROBLEM TO BE SOLVED: To improve vibration characteristics by achieving compatibility of preventing excessive erosion of etching with securing easiness of separation of a crystal piece part from a crystal substrate to improve shape accuracy of a rectangular crystal piece part (crystal diaphragm) and to improve an oscillation characteristic.;SOLUTION: A thickness-shear vibration type crystal piece M1 manufactured by etching the crystal substrate 11 has the rectangular crystal piece part 1 formed on the crystal substrate 11 by etching, a support frame part 2 for supporting the crystal piece part 1, and a connecting part 3 for separation to connect the crystal piece part 1 with the support frame part 2. The crystal piece part 1 is driven by a thickness-shear mode. The connecting part 3 for separation is disposed in at least one corner part in a Z'-axis direction forming an axis inclined from the Z-axis (optical axis) of a crystal crystalline axis that is the base end part of the crystal piece part 1 on the positive side of the X-axis (electrical axis) of the crystal crystalline axis. Furthermore, the connecting part 3 for separation is formed so as to continuously cover from an outside a virtual side face K1 formed by virtually extending the outside face of the end part in the Z'-axis direction of the crystal piece part 1 in the X-axis direction and a virtual base end face K2 formed by virtually extending the base end face on the positive side of the X-axis of the crystal piece part 1 in the Z'-axis direction.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:通过实现防止蚀刻过度侵蚀的相容性来提高振动特性,同时确保容易将晶体片部分从晶体基板上分离,从而提高矩形晶体片部分(晶体振动膜)的形状精度,并改善振动特性。解决方案:通过蚀刻晶体基板11制造的厚度-剪切振动型晶体片M1具有通过蚀刻形成在晶体基板11上的矩形晶体片部分1,用于支撑晶体片部分1的支撑框架部分2。 ;和用于分离的连接部分3,以将晶体片部分1与支撑框架部分2连接。晶体片部分1以厚度剪切模式驱动。分离用连接部3配置在Z'轴方向的至少一个角部上,该Z'轴方向形成为从作为结晶片部的基端部的结晶轴的Z轴(光轴)倾斜的轴。在结晶轴的X轴(电轴)的正侧上为1。此外,用于分离的连接部3形成为从外部连续覆盖虚拟侧面K1,该虚拟侧面K1通过在X方向上将端部的外表面沿晶体片部分1的Z′轴方向虚拟延伸而形成。轴方向和虚拟基本端面K2,该基本虚拟端面K2是通过将晶体件1的X轴正方向上的基本端面沿Z'轴方向虚拟延伸而形成的。版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP5929244B2

    专利类型

  • 公开/公告日2016-06-01

    原文格式PDF

  • 申请/专利权人 株式会社大真空;

    申请/专利号JP20120017619

  • 发明设计人 村上 達也;

    申请日2012-01-31

  • 分类号H03H9/19;H03H9/10;H03H9/02;H03H3/02;

  • 国家 JP

  • 入库时间 2022-08-21 14:40:34

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