首页> 外国专利> Photoconductive antenna, terahertz wave generation device, the camera, the imaging device and the measuring device

Photoconductive antenna, terahertz wave generation device, the camera, the imaging device and the measuring device

机译:光电导天线,太赫兹波产生装置,照相机,成像装置和测量装置

摘要

A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes first and second conductive layers, a semiconductor layer, and first and second electrodes. The semiconductor layer is made of a semiconductor material having a carrier density that is lower than a carrier density of the semiconductor material of the first conductive layer or the second conducive layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. The semiconductor layer includes an incidence surface through which the pulsed light enters the semiconductor layer, and an emission surface from which the terahertz waves are emitted. The incidence surface is positioned in a side surface of the semiconductor layer having a normal direction extending orthogonal to a lamination direction, and the emission surface is positioned in the side surface at a position different from the incidence surface.
机译:光电导天线适于在被脉冲光照射时产生太赫兹波。光电导天线包括第一和第二导电层,半导体层以及第一和第二电极。半导体层由载流子密度低于第一导电层或第二导电层的半导体材料的载流子密度的半导体材料制成。第一和第二电极分别电连接到第一和第二导电层。半导体层包括:脉冲光通过其入射到半导体层的入射面;以及发射太赫兹波的发射面。入射面位于半导体层的法线方向的侧面,该法线方向正交于层叠方向延伸,出射面位于侧面中与入射面不同的位置。

著录项

  • 公开/公告号JP5998479B2

    专利类型

  • 公开/公告日2016-09-28

    原文格式PDF

  • 申请/专利权人 セイコーエプソン株式会社;

    申请/专利号JP20110290068

  • 发明设计人 冨岡 紘斗;

    申请日2011-12-28

  • 分类号H01S1/02;H01L31/00;G01N21/3586;G01N21/27;

  • 国家 JP

  • 入库时间 2022-08-21 14:41:55

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