Method of chemically and mechanically polishing a substrate with the polishing composition adapted to increase the silicon oxide removal

• 1. 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法 [P] . 中国专利： CN102206465B . 2014.04.02
• 2. 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法 [P] . 中国专利： CN102206465A . 2011-10-05
• 3. A method for the chemical-mechanical polishing of a substrate with a polishing composition, which is adapted to increase the silicon oxide removal. [P] . 德国专利： DE102011013982A1 . 2014-02-13

  机译： 一种用抛光组合物对机械进行化学机械抛光的方法，该方法适于增加氧化硅的去除。

• 4. METHOD FOR CHEMICAL MECHANICAL POLISHING OF A SUBSTRATE WITH A POLISHING COMPOSITION ADAPTED TO INCREASE THE ELIMINATION OF SILICON OXIDE [P] . 法国专利： FR2958200A1 . 2011-10-07

  机译： 用抛光组合物对基质进行化学机械抛光的方法，以提高氧化硅的消除

• 5. METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE WITH POLISHING COMPOSITION ADAPTED TO ENHANCE SILICON OXIDE REMOVAL [P] . 韩国专利： KR101672809B1 . 2016-11-04

  机译： 化学机械抛光基质以增强氧化硅去除的抛光方法

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• 2. Electrochemical characteristic of chemical-mechanical polishing of copper with oxide passive film [J] . 何捍卫, 胡岳华, 周科朝, 中国有色金属学报（英文版） . 2003,第004期
• 3. Novel α-amine-functionalized silica-based dispersions for selectively polishing polysilicon and Si(100) over silicon dioxide, silicon nitride or copper during chemical mechanical polishing [J] . Veera Dandu P.R., Penta N.K., Babu S.V. Colloids and Surfaces, A. Physicochemical and Engineering Aspects . 2010,第1a3期
• 4. Chemical Mechanical Polishing (CMP) in Magnetic Float Polishing (MFP) of Advanced Ceramic (Silicon Nitride) and Glass (Silicon Dioxide [J] . M.Jiang, R.Komanduri Key Engineering Materials . 2001,第期
• 5. Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs [J] . Michio Uneda, Yuki Maeda, Kazutaka Shibuya, Sensors and materials . 2014,第6期
• 6. Chemical Mechanical Polishing (CMP) in Magnetic Float Polishing (MFP) of Advanced Ceramic (Silicon Nitride) and Glass (Silicon Dioxide) [C] . M. Jiang, R. Komanduri Grinding and machining conference . 2001
• 7. Tunable removal rates of silicon dioxide, silicon nitride and polysilicon films during chemical mechanical polishing. [D] . Dandu, Veera P. R. 2010
• 8. Effect of chemical mechanical polishing on surface nature of titanium implants FT-IR and wettability data of titanium implants surface after chemical mechanical polishing implementation [O] . Zeynep Ozdemir, Gul Bahar Basim 2017
• 9. Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs [O] . 2014

• 1. Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing [J] . 边燕飞 ,翟文杰 ,程媛媛 . 中南大学学报 . 2014,第006期
• 2. Chemical Mechanical Polishing of Glass Substrate with α-Alumina-g-Polystyrene Sulfonic Acid Composite Abrasive [J] . LEI Hong ,BU Naijing ,ZHANG Zefang . 中国机械工程学报 . 2010,第003期
• 3. Chemical Mechanical Polishing of Glass Substrate with α-Alumina-g-Polystyrene Sulfonic Acid Composite Abrasive [J] . LEI Hong ,BU Naijing ,ZHANG Zefang . 中国机械工程学报 . 2010,第003期
• 4. 胶体二氧化硅基蓝宝石化学机械抛光液抛光机制研究 [C] . Xing Xing ,邢星 ,Liangyong Wang . 2013年海峡两岸平坦化技术研讨会 . 2013
• 5. 圆平动化学机械抛光的流体动力性能及材料去除率研究 [A] . 冯培连 . 2007